resistive switching memory

The structure comprises of an insulating layer (I) sandwiched between the two metal (M) electrodes. Abstract: Resistive-switching random access memory (RRAM) devices based on filamentary switching are attracting widespread interest for their unique properties, such as high ON-OFF ratio, ultrasteep slope, good endurance, and low-current operation. A resistive random access memory (RRAM) consists of a resistive switching memory cell having a metal-insulator-metal structure generally referred to as MIM structure. This changes the electrical resistance, which can be … However, the lack of data for the Lissajous curves over a range of initial conditions or over a range of frequencies complicates assessments of this claim. A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. We study resistive switching memory phenomena in conducting polymer PEDOT PSS. Resistive switching memory devices offer several advantages over the currently used computer memory technology. A memory device based on natural organic material is a promising device toward the next generation of nonvolatile nanoelectronics. This is the first report on switchable diode phenomenon based on conducting organic materials. The cells have two electrodes, for example made of silver and platinum, at which the ions dissolve and then precipitate again. The resistive switching characteristics and switching mechanisms of the Au-implanted- ZrO ₂ film are extensively investigated for nonvolatile memory applications. In the same film, there are two types of memory behavior coexisting; namely, the switchable diode effect and write once read many memory. According to Chua all resistive switching memories including ReRAM, MRAM and phase-change memory meet these criteria and are memristors. Here we review the development of in-memory computing using resistive switching devices, where the two-terminal structure of the devices, their resistive switching properties, and direct data processing in the memory can enable area- and energy-efficient computation. Devices such as resistive switching memory (RRAM) [1–3], phase change memory (PCM) [4–6], and spin-transfer torque memories (STTRAM) [7–9] have been proposed, each of them presenting advantages in terms of area occupation, speed, and scaling. A typical resistive memory device is composed of one layer of active materials sandwiched between two conductive electrodes (), displaying different states of current conductivity upon applying a voltage bias , , , , , .A binary state device means that it can switch between a high-resistance (low-conductivity) OFF state and a low-resistance (high-conductivity) ON state in response … The memory device shows reproducible and reliable bipolar resistive switching characteristics. 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